Intel® 3D NAND Technology extends our leadership in flash memory with an architecture designed for higher capacity and optimal performance, a proven manufacturing process providing accelerated transitions and scaling, and rapid portfolio expansion for multiple market segments.
Intel® 3D NAND Technology is an innovative response to the industry’s growing demand for data storage capacity. Compared to other available NAND solutions, Intel® 3D NAND Technology is designed on floating gate architecture with a smaller cell size and a highly efficient memory array, which enables higher capacity solutions and high reliability with strong protection from charge loss.
Intel® 3D NAND Technology accelerates Moore's Law into three dimensions, overcoming the capacity limitations of traditional 2D NAND technology. The vertical layering of our 3D NAND enables higher areal density today, with scalability for the future.
Intel has applied 30 years of flash cell experience to transition NAND from 2D to 3D, multi-level cell (MLC) to tri-level cell (TLC), and 32-layer to our breakthrough 64-layer technology. All of this is done to deliver the highest areal density and rapidly grow storage capacities in 3D NAND solutions.
With 3D NAND technology, Intel delivers innovative, high-value capabilities into a broad product portfolio. Our experience of designing this architecture into SSD solutions enables us to rapidly improve performance, power consumption, performance consistency, and reliability with each generation.
Intel is using manufacturing processes proven by decades of high volume output to build 3D NAND technology. With strong generational synergy across our factory network, Intel expects to grow 3D NAND capacity faster than the market, enabling us to deliver disruptive total cost of ownership and application acceleration to our customer base.
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